5秒后页面跳转
MJD340T4 PDF预览

MJD340T4

更新时间: 2024-06-20 14:40:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体管
页数 文件大小 规格书
5页 68K
描述
互补硅功率晶体管

MJD340T4 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252包装说明:DPAK-2/3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.59Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:15 W
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJD340T4 数据手册

 浏览型号MJD340T4的Datasheet PDF文件第2页浏览型号MJD340T4的Datasheet PDF文件第3页浏览型号MJD340T4的Datasheet PDF文件第4页浏览型号MJD340T4的Datasheet PDF文件第5页 
MJD340  
MJD350  
COMPLEMENTARY SILICON POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
MEDIUM VOLTAGE CAPABILITY  
SURFACE-MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
ELECTRICAL SIMILAR TO MJE340 AND  
3
MJE350  
1
APPLICATIONS  
SOLENOID/RELAYDRIVERS  
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
The MJD340 and MJD350 form complementary  
NPN - PNP pairs.  
They are manufactured using Medium Voltage  
Epitaxial Planar technology, resulting in a rugged  
high performance cost-effectivetransistor.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
MJD340  
MJD350  
300  
Unit  
NPN  
PNP  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
300  
3
V
0.5  
A
ICM  
Collector Peak Current (tp = 25 oC)  
Total Power Dissipation at Tcase 25 oC  
Storage Temperature  
0.75  
A
Ptot  
Tstg  
Tj  
15  
W
oC  
oC  
-65 to 150  
150  
Max Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/5  
June 1997  

MJD340T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD47T4 STMICROELECTRONICS

类似代替

NPN power transistor
MJD340G ONSEMI

功能相似

High Voltage Power Transistors
MJD340T4G ONSEMI

功能相似

High Voltage Power Transistors

与MJD340T4相关器件

型号 品牌 获取价格 描述 数据表
MJD340T4G ONSEMI

获取价格

High Voltage Power Transistors
MJD340TF FAIRCHILD

获取价格

High Voltage Power Transistors D-PAK for Surface Mount Applications
MJD340TF ONSEMI

获取价格

0.5 A, 300 V High Voltage NPN Bipolar Power Transistor
MJD350 FAIRCHILD

获取价格

High Voltage Power Transistors D-PAK for Surface Mount Applications
MJD350 STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJD350 ONSEMI

获取价格

SILICON POWER TRANSISTORS
MJD350 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD350 DIODES

获取价格

HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
MJD350 KEXIN

获取价格

PNP Epitaxial Silicon Transistor
MJD350 TYSEMI

获取价格

Load Formed for Surface Mount Application