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MJD340T4

更新时间： 2024-11-19 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 93K
描述
0.5 A，300 V，高电压，NPN 双极功率晶体管

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中文翻译

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MJD340T4 技术参数

是否无铅： 含铅生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.06
Is Samacsys：NBase Number Matches：1

MJD340T4 数据手册

 浏览型号MJD340T4的Datasheet PDF文件第2页浏览型号MJD340T4的Datasheet PDF文件第3页浏览型号MJD340T4的Datasheet PDF文件第4页浏览型号MJD340T4的Datasheet PDF文件第5页浏览型号MJD340T4的Datasheet PDF文件第6页 
MJD340ꢀ(NPN),  
MJD350ꢀ(PNP)  
High Voltage Power  
Transistors  
DPAK for Surface Mount Applications  
www.onsemi.com  
Designed for line operated audio output amplifier, switchmode  
power supply drivers and other switching applications.  
Features  
SILICON  
POWER TRANSISTORS  
0.5 AMPERE  
300 VOLTS, 15 WATTS  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
• Electrically Similar to Popular MJE340 and MJE350  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COLLECTOR  
2, 4  
COLLECTOR  
2, 4  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
1
1
Compliant  
BASE  
BASE  
MAXIMUM RATINGS  
3
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
300  
300  
3
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
EMITTER  
EMITTER  
V
CEO  
V
CB  
4
V
EB  
2
1
Collector Current − Continuous  
Collector Current − Peak  
Total Power Dissipation  
I
C
0.5  
0.75  
3
I
CM  
DPAK  
CASE 369C  
STYLE 1  
P
D
D
@ T = 25°C  
15  
0.12  
W
W/°C  
C
Derate above 25°C  
MARKING DIAGRAM  
Total Power Dissipation (Note 1)  
P
@ T = 25°C  
1.56  
0.012  
W
W/°C  
A
Derate above 25°C  
AYWW  
J3x0G  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
ESD − Human Body Model  
HBM  
V
MJD340 (NPN)  
MJD350 (PNP)  
3B  
2
A
Y
= Assembly Location  
= Year  
ESD − Machine Model  
MM  
V
MJD340 (NPN)  
MJD350 (PNP)  
M4  
M4  
WW = Work Week  
J3x0 = Device Code  
x= 4 or 5  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2016 − Rev. 12  
MJD340/D  
 
123456

中文翻译

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MJD340T4 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD340T4G ONSEMI

完全替代

 High Voltage Power Transistors
MJD340G ONSEMI

完全替代

 High Voltage Power Transistors
MJD340T4G ONSEMI

完全替代

 High Voltage Power Transistors

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