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MJD340 PDF预览

MJD340

更新时间: 2024-11-17 22:29:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 40K
描述
High Voltage Power Transistors D-PAK for Surface Mount Applications

MJD340 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.06Is Samacsys:N
Base Number Matches:1

MJD340 数据手册

 浏览型号MJD340的Datasheet PDF文件第2页浏览型号MJD340的Datasheet PDF文件第3页浏览型号MJD340的Datasheet PDF文件第4页 
MJD340  
High Voltage Power Transistors  
D-PAK for Surface Mount Applications  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
300  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
300  
V
3
V
I
I
0.5  
A
C
0.75  
15  
A
CP  
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.56  
150  
a
T
Junction Temperature  
Storage Temperature  
J
T
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= 1mA, I = 0  
300  
V
CEO  
CEO  
EBO  
C
B
I
I
V
V
V
= 300V, I =0  
0.1  
0.1  
mA  
mA  
CB  
EB  
CE  
E
= 3V, I = 0  
C
h
* DC Current Gain  
= 10V, I = 50mA  
30  
240  
FE  
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

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