Datasheet > MJD340_11

MJD340_11

更新时间： 2024-11-18 10:55:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	120K
描述
High Voltage Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD340_11 数据手册

MJD340 (NPN)

MJD350 (PNP)

High Voltage Power

Transistors

DPAK For Surface Mount Applications

http://onsemi.com

Designed for line operated audio output amplifier, switchmode

power supply drivers and other switching applications.

SILICON

Features

POWER TRANSISTORS

0.5 AMPERE

300 VOLTS, 15 WATTS

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Electrically Similar to Popular MJE340 and MJE350

• 300 V (Min) − V

CEO(sus)

• 0.5 A Rated Collector Current

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

DPAK

CASE 369C

STYLE 1

• These are Pb−Free Packages

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

300

Unit

Vdc

Adc

MARKING DIAGRAM

CEO

AYWW

J3x0G

0.5

0.75

Collector Current − Continuous

− Peak

= Assembly Location

= Year

Total Power Dissipation @ T = 25°C

0.12

W/°C

Derate above 25°C

WW = Work Week

J3x0 = Device Code

x= 4 or 5

Total Power Dissipation (Note 1)

1.56

0.012

W/°C

@ T = 25°C

= Pb−Free Package

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

8.33

Unit

°C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note 1)

Leading Temperature for Soldering Purpose

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

Publication Order Number:

January, 2011 − Rev. 8

MJD340/D

12 3 4 5

中文翻译

下载PDF

与MJD340_11相关器件

型号	品牌	获取价格	描述	数据表
MJD340-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340-13	DIODES	获取价格	HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
MJD340G	ONSEMI	获取价格	High Voltage Power Transistors
MJD340R	SWST	获取价格	功率三极管
MJD340RL	ONSEMI	获取价格	0.5 A，300 V，高电压，NPN 双极功率晶体管
MJD340RLG	ONSEMI	获取价格	High Voltage Power Transistors
MJD340T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
MJD340T4	ONSEMI	获取价格	0.5 A，300 V，高电压，NPN 双极功率晶体管
MJD340T4	STMICROELECTRONICS	获取价格	互补硅功率晶体管
MJD340T4G	ONSEMI	获取价格	High Voltage Power Transistors