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MJD340-13 PDF预览

MJD340-13

更新时间: 2024-11-21 10:55:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管高压
页数 文件大小 规格书
4页 98K
描述
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR

MJD340-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.6
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MJD340-13 数据手册

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MJD340  
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
High Collector-EmitterVoltage  
Ideally Suited for Automated Assembly Processes  
Ideal for Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Case: DPAK  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.34 grams (approximate)  
COLLECTOR  
2,4  
3
1
4
2
BASE  
1
3
EMITTER  
Device Schematic  
Top View  
Pin Out Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
300  
300  
3
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Continuous Collector Current  
Peak Pulse Collector Current  
0.5  
A
0.75  
A
ICM  
Thermal Characteristics  
Characteristic  
Power Dissipation @TC = 25°C  
Symbol  
PD  
Value  
15  
Unit  
W
Thermal Resistance, Junction to Case  
Power Dissipation @TA = 25°C (Note 3)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
8.33  
°C/W  
W
Rθ  
PD  
JC  
1.56  
80  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Emitter Sustaining Voltage  
Collector Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
300  
V
V(SUS)CEO  
ICBO  
100  
IC = 1mA, IB = 0  
μA  
μA  
VCB = 300V, IE = 0  
VEB = 3V, IC = 0  
Emitter Cutoff Current  
100  
IEBO  
ON CHARACTERISTICS (Note 4)  
DC Current Gain  
30  
240  
hFE  
VCE = 10V, IC = 50mA  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
1 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MJD340  
Document number: DS31609 Rev. 2 - 2  

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