是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 5.77 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NJVMJD32CG | ONSEMI |
类似代替 |
Complementary Power Transistors | |
MJD32CT4G | ONSEMI |
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Complementary Power Transistors | |
MJD32CRLG | ONSEMI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH32I | FAIRCHILD |
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3 A, 40 V, PNP, Si, POWER TRANSISTOR, IPAK-3 | |
KSH32-I | SAMSUNG |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH32TF | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH340 | FAIRCHILD |
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High Voltage Power Transistors D-PAK for Surface Mount Applications | |
KSH340I | FAIRCHILD |
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0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, IPAK-3 | |
KSH340TF | ONSEMI |
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NPN外延硅晶体管 | |
KSH350 | FAIRCHILD |
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High Voltage Power Transistors D-PAK for Surface Mount Applications | |
KSH350I | FAIRCHILD |
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0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, IPAK-3 | |
KSH350-I | FAIRCHILD |
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Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
KSH350TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plast |