Datasheet > KSH340TF

KSH340TF

更新时间： 2024-11-02 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
7页	160K
描述
NPN外延硅晶体管

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中文翻译

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技术参数
数据手册
替代型号

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KSH340TF 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.16
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	300 V
配置：	SINGLE	最小直流电流增益 (hFE)：	30
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	15 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

KSH340TF 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

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KSH340TF 替代型号

型号	品牌	替代类型	描述	数据表
MJD47TF	ONSEMI	类似代替	1.0 A, 250 V High Voltage NPN Bipolar Power Junction Transistor
MJD340TF	ONSEMI	类似代替	0.5 A, 300 V High Voltage NPN Bipolar Power Transistor
MJD340G	ONSEMI	类似代替	High Voltage Power Transistors

与KSH340TF相关器件

型号	品牌	获取价格	描述	数据表
KSH350	FAIRCHILD	获取价格	High Voltage Power Transistors D-PAK for Surface Mount Applications
KSH350I	FAIRCHILD	获取价格	0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, IPAK-3
KSH350-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
KSH350TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plast
KSH350TM	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plast
KSH41	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH41C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica
KSH41C	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH41C-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSH41C-I	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

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