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KSH350-I PDF预览

KSH350-I

更新时间: 2024-09-13 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管
页数 文件大小 规格书
5页 45K
描述
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

KSH350-I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.91
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

KSH350-I 数据手册

 浏览型号KSH350-I的Datasheet PDF文件第2页浏览型号KSH350-I的Datasheet PDF文件第3页浏览型号KSH350-I的Datasheet PDF文件第4页浏览型号KSH350-I的Datasheet PDF文件第5页 
KSH350  
High Voltage Power Transistors  
D-PAK for Surface Mount Applications  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 300  
- 300  
- 3  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
V
V
I
I
- 0.5  
- 0.75  
15  
A
C
A
CP  
P
Collector Dissipation (T = 25°C)  
W
W
°C  
C
C
Collector Dissipation (T = 25°C)  
1.56  
150  
a
T
Junction Temperature  
J
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= -1mA, I = 0  
-300  
V
CEO  
CEO  
EBO  
C
B
I
I
V
V
V
= -300V, I =0  
-0.1  
-0.1  
240  
mA  
mA  
CB  
EB  
CE  
E
= -3V, I = 0  
C
h
* DC Current Gain  
= -10V, I = -50mA  
30  
FE  
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

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