是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.91 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH350TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plast | |
KSH350TM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plast | |
KSH41 | SAMSUNG |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH41C | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica | |
KSH41C | SAMSUNG |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH41C-I | FAIRCHILD |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSH41C-I | SAMSUNG |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH41CITU | FAIRCHILD |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic | |
KSH41CTF | FAIRCHILD |
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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
KSH41CTF | ONSEMI |
获取价格 |
NPN外延硅晶体管 |