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KSH42-I PDF预览

KSH42-I

更新时间: 2024-11-01 19:47:07
品牌 Logo 应用领域
三星 - SAMSUNG 放大器晶体管
页数 文件大小 规格书
1页 19K
描述
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

KSH42-I 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74最大集电极电流 (IC):6 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

KSH42-I 数据手册

  

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