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KSH350TF PDF预览

KSH350TF

更新时间: 2024-09-13 13:02:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管
页数 文件大小 规格书
5页 45K
描述
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

KSH350TF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.24最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSH350TF 数据手册

 浏览型号KSH350TF的Datasheet PDF文件第2页浏览型号KSH350TF的Datasheet PDF文件第3页浏览型号KSH350TF的Datasheet PDF文件第4页浏览型号KSH350TF的Datasheet PDF文件第5页 
KSH350  
High Voltage Power Transistors  
D-PAK for Surface Mount Applications  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 300  
- 300  
- 3  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
V
V
I
I
- 0.5  
- 0.75  
15  
A
C
A
CP  
P
Collector Dissipation (T = 25°C)  
W
W
°C  
C
C
Collector Dissipation (T = 25°C)  
1.56  
150  
a
T
Junction Temperature  
J
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= -1mA, I = 0  
-300  
V
CEO  
CEO  
EBO  
C
B
I
I
V
V
V
= -300V, I =0  
-0.1  
-0.1  
240  
mA  
mA  
CB  
EB  
CE  
E
= -3V, I = 0  
C
h
* DC Current Gain  
= -10V, I = -50mA  
30  
FE  
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

KSH350TF 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD350T4G ONSEMI

类似代替

High Voltage Power Transistors
MJD350T4G ONSEMI

功能相似

High Voltage Power Transistors

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