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KSH42 PDF预览

KSH42

更新时间: 2024-11-01 21:13:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 206K
描述
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

KSH42 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

KSH42 数据手册

 浏览型号KSH42的Datasheet PDF文件第2页浏览型号KSH42的Datasheet PDF文件第3页 
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与KSH42相关器件

型号 品牌 获取价格 描述 数据表
KSH42C FAIRCHILD

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General Purpose Amplifier Low Speed Switching Applications
KSH42C SAMSUNG

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42C-I FAIRCHILD

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42C-I SAMSUNG

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42CTF FAIRCHILD

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General Purpose Amplifier Low Speed Switching Applications
KSH42CTF ONSEMI

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PNP外延硅晶体管
KSH42CTM FAIRCHILD

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Power Bipolar Transistor
KSH42CTM ONSEMI

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PNP外延硅晶体管
KSH42I FAIRCHILD

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42-I SAMSUNG

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Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,