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KSH44H11ITU PDF预览

KSH44H11ITU

更新时间: 2024-11-05 12:48:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
6页 168K
描述
NPN Epitaxial Silicon Transistor

KSH44H11ITU 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-251
包装说明:PLASTIC, IPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.24
Is Samacsys:N最大集电极电流 (IC):8 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

KSH44H11ITU 数据手册

 浏览型号KSH44H11ITU的Datasheet PDF文件第2页浏览型号KSH44H11ITU的Datasheet PDF文件第3页浏览型号KSH44H11ITU的Datasheet PDF文件第4页浏览型号KSH44H11ITU的Datasheet PDF文件第5页浏览型号KSH44H11ITU的Datasheet PDF文件第6页 
November 2013  
KSH44H11 / KSH44H11I  
NPN Epitaxial Silicon Transistor  
Description  
Features  
Designed for general-purpose power and switching, such  
as output or driver stages in applications.  
• Lead Formed for Surface Mount Application (No Suffix)  
• Straight Lead (I-PAK, “- I” Suffix)  
• Electrically Similar to Popular KSE44H  
• Fast Switching Speeds  
• Low Collector-Emitter Saturation Voltage  
Applications  
• Switching Regulators  
• Converters  
• Power Amplifiers  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
Ordering Information  
Part Number  
KSH44H11TF  
KSH44H11TM  
KSH44H11ITU  
Top Mark  
KSH44H11  
KSH44H11  
KSH44H11-I  
Package  
Packing Method  
Tape and Reel  
Tape and Reel  
Rail  
TO-252 3L (DPAK)  
TO-252 3L (DPAK)  
TO-251 3L (IPAK)  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.  
Symbol  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
5
V
Collector Current (DC)  
Collector Current (Pulse)  
8
A
ICP  
16  
A
Collector Dissipation (TC = 25°C)  
Collector Dissipation (TA = 25°C)  
Junction Temperature  
20.00  
1.75  
150  
PC  
W
TJ  
°C  
°C  
TSTG  
Storage Temperature  
-65 to 150  
© 2002 Fairchild Semiconductor Corporation  
KSH44H11 / KSH44H11I Rev. 1.1.0  
www.fairchildsemi.com  
1

KSH44H11ITU 替代型号

型号 品牌 替代类型 描述 数据表
MJD44H11-001 ONSEMI

类似代替

SILICON POWER TRANSISTORS
MJD44H11-1G ONSEMI

功能相似

Complementary Power Transistors
MJD44H11-001G ONSEMI

功能相似

Complementary Power Transistors

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PNP 外延硅晶体管