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KSH45H11-I PDF预览

KSH45H11-I

更新时间: 2024-11-01 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器
页数 文件大小 规格书
5页 44K
描述
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

KSH45H11-I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.81最大集电极电流 (IC):8 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

KSH45H11-I 数据手册

 浏览型号KSH45H11-I的Datasheet PDF文件第2页浏览型号KSH45H11-I的Datasheet PDF文件第3页浏览型号KSH45H11-I的Datasheet PDF文件第4页浏览型号KSH45H11-I的Datasheet PDF文件第5页 
KSH45H11  
General Purpose Power and Switching Such  
as Output or Driver Stages in Applications  
D-PAK for Surface Mount Applications  
Lead Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular KSE45H  
Fast Switching Speeds  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
Low Collector Emitter Saturation Voltage  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 80  
Units  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
CEO  
EBO  
- 5  
V
I
I
Collector Current (DC)  
Collector Current (Pulse)  
- 8  
A
C
- 16  
A
CP  
P
Collector Dissipation (T =25°C)  
20  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.75  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
I
= - 30mA, I = 0  
- 80  
V
CEO  
CEO  
EBO  
C
B
I
I
V
V
= - 80V, I = 0  
- 10  
- 50  
µA  
µA  
CE  
BE  
B
= - 5V, I = 0  
C
h
DC Current Gain  
V
V
= - 1V, I = - 2A  
60  
40  
FE  
CE  
CE  
C
= - 1V, I = - 4A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Collector Capacitance  
Turn On Time  
I
I
= - 8A, I = - 0.4A  
- 1  
V
V
CE  
BE  
C
C
B
(on)  
= - 8A, I = - 0.8A  
- 1.5  
B
f
V
V
= - 10A, I = - 0.5A  
40  
230  
135  
500  
100  
MHz  
pF  
ns  
T
CE  
CB  
C
C
= - 10V, f = 1MHz  
ob  
t
t
t
I
I
= - 5A  
ON  
C
= - I = - 0.5A  
Storage Time  
B1  
B2  
ns  
STG  
F
Fall Time  
ns  
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

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