是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.81 | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH45H11ITU | ONSEMI |
获取价格 |
PNP 外延硅晶体管 | |
KSH45H11TF | ROCHESTER |
获取价格 |
8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH45H11TF | ONSEMI |
获取价格 |
PNP 外延硅晶体管 | |
KSH45H11TM | ROCHESTER |
获取价格 |
8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH45H11TM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH45H11TM | ONSEMI |
获取价格 |
PNP 外延硅晶体管 | |
KSH45H11TM_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH45H11TU | FAIRCHILD |
获取价格 |
暂无描述 | |
KSH47 | FAIRCHILD |
获取价格 |
High Voltage and High Reliability D-PAK for Surface Mount Applications | |
KSH47I | FAIRCHILD |
获取价格 |
1 A, 250 V, NPN, Si, POWER TRANSISTOR, IPAK-3 |