是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.58 | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-251AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD44H11-001 | ONSEMI |
完全替代 |
SILICON POWER TRANSISTORS | |
MJD44H11-1G | ONSEMI |
类似代替 |
Complementary Power Transistors | |
MJD44H11-001G | ONSEMI |
功能相似 |
Complementary Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH44H11TF | FAIRCHILD |
获取价格 |
General Purpose Power and Switching | |
KSH44H11TF | ONSEMI |
获取价格 |
NPN 外延硅晶体管 | |
KSH44H11-TF | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
KSH44H11TF_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plasti | |
KSH44H11TM | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor | |
KSH44H11TM | ONSEMI |
获取价格 |
NPN 外延硅晶体管 | |
KSH45H11 | FAIRCHILD |
获取价格 |
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK | |
KSH45H11I | FAIRCHILD |
获取价格 |
8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
KSH45H11-I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH45H11ITU | ONSEMI |
获取价格 |
PNP 外延硅晶体管 |