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KSH45H11ITU PDF预览

KSH45H11ITU

更新时间： 2024-11-02 11:13:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 304K
描述
PNP 外延硅晶体管

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中文翻译

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KSH45H11ITU 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.69
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-251JESD-30 代码：R-PSIP-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：1.8 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz

KSH45H11ITU 数据手册

 浏览型号KSH45H11ITU的Datasheet PDF文件第2页浏览型号KSH45H11ITU的Datasheet PDF文件第3页浏览型号KSH45H11ITU的Datasheet PDF文件第4页浏览型号KSH45H11ITU的Datasheet PDF文件第5页浏览型号KSH45H11ITU的Datasheet PDF文件第6页浏览型号KSH45H11ITU的Datasheet PDF文件第7页 
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
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中文翻译

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KSH45H11ITU 替代型号

型号 品牌 替代类型 描述 数据表
MJD45H11-1G ONSEMI

类似代替

 Complementary Power Transistors

与KSH45H11ITU相关器件

型号 品牌 获取价格 描述 数据表
KSH45H11TF ROCHESTER

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 		8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3
KSH45H11TF ONSEMI

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 		PNP 外延硅晶体管
KSH45H11TM ROCHESTER

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 		8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3
KSH45H11TM FAIRCHILD

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 		Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
KSH45H11TM ONSEMI

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 		PNP 外延硅晶体管
KSH45H11TM_NL FAIRCHILD

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 		Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
KSH45H11TU FAIRCHILD

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 		暂无描述
KSH47 FAIRCHILD

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 		High Voltage and High Reliability D-PAK for Surface Mount Applications
KSH47I FAIRCHILD

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 		1 A, 250 V, NPN, Si, POWER TRANSISTOR, IPAK-3
KSH47-I FAIRCHILD

获取价格

 		Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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