生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.21 |
Is Samacsys: | N | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 20 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH44H11TF_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plasti | |
KSH44H11TM | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor | |
KSH44H11TM | ONSEMI |
获取价格 |
NPN 外延硅晶体管 | |
KSH45H11 | FAIRCHILD |
获取价格 |
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK | |
KSH45H11I | FAIRCHILD |
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8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
KSH45H11-I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH45H11ITU | ONSEMI |
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PNP 外延硅晶体管 | |
KSH45H11TF | ROCHESTER |
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8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH45H11TF | ONSEMI |
获取价格 |
PNP 外延硅晶体管 | |
KSH45H11TM | ROCHESTER |
获取价格 |
8A, 80V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 |