KSH41CTM

更新时间： 2024-09-13 13:09:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管功率双极晶体管
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6页	55K
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替代型号

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KSH41CTM 数据手册

KSH41C

General Purpose Amplifier Low Speed

Switching Applications

D-PAK for Surface Mount Applications

•

Lead Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP41 and TIP41C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

100

CBO

CEO

EBO

100

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.75

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= 30mA, I = 0

100

CEO

CES

EBO

= 60V, I = 0

µA

= 100V, V = 0

= 5V, I = 0

0.5

* DC Current Gain

= 4V, I = 0.3A

= 4V, I = 3A

1.5

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

= 6A, I = 600mA

(on)

= 6A, I = 4A

Current Gain Bandwidth Product

= 10V, I = 500mA

MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A4, October 2002

12 3 4 5 6

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KSH41CTM 替代型号

型号	品牌	替代类型	描述	数据表
KSH41CTF	FAIRCHILD	完全替代	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic

与KSH41CTM相关器件

型号	品牌	获取价格	描述	数据表
KSH41-I	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
KSH42C	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42C-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42C-I	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH42CTF	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
KSH42CTF	ONSEMI	获取价格	PNP外延硅晶体管
KSH42CTM	FAIRCHILD	获取价格	Power Bipolar Transistor