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MJD32T4G PDF预览

MJD32T4G

更新时间： 2024-11-18 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器
页数 文件大小 规格书
8页 82K
描述
Complementary Power Transistors

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中文翻译

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MJD32T4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：0.66Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：3 A
集电极-发射极最大电压：40 V配置：SINGLE
最小直流电流增益 (hFE)：10JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

MJD32T4G 数据手册

 浏览型号MJD32T4G的Datasheet PDF文件第2页浏览型号MJD32T4G的Datasheet PDF文件第3页浏览型号MJD32T4G的Datasheet PDF文件第4页浏览型号MJD32T4G的Datasheet PDF文件第5页浏览型号MJD32T4G的Datasheet PDF文件第6页浏览型号MJD32T4G的Datasheet PDF文件第7页 
MJD31, MJD31C (NPN),  
MJD32, MJD32C (PNP)  
MJD31C and MJD32C are Preferred Devices  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
3 AMPERES  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
• Electrically Similar to Popular TIP31 and TIP32 Series  
40 AND 100 VOLTS  
15 WATTS  
• Epoxy Meets UL 94, V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAMS  
• Pb−Free Packages are Available  
4
DPAK  
YWW  
CASE 369C  
STYLE 1  
J3xxG  
2
1
MAXIMUM RATINGS  
3
Rating  
Symbol  
Max  
Unit  
Collector−Emitter Voltage  
V
Vdc  
CEO  
4
40  
100  
MJD31, MJD32  
MJD31C, MJD32C  
DPAK−3  
CASE 369D  
STYLE 1  
YWW  
J3xxG  
Collector−Base Voltage  
Emitter−Base Voltage  
V
Vdc  
CB  
EB  
40  
100  
MJD31, MJD32  
MJD31C, MJD32C  
1
2
3
V
5
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
3
5
C
Y
WW  
xx  
= Year  
= Work Week  
= 1, 1C, 2, or 2C  
Base Current  
I
1
Adc  
B
G
= Pb−Free Package  
P
P
15  
0.12  
W
W/°C  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
D
D
C
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1.56  
0.012  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
W
W/°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.3  
80  
Unit  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
Lead Temperature for Soldering Purposes  
R
q
JC  
R
q
JA  
T
260  
L
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 6  
MJD31/D  
12345678

中文翻译

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MJD32T4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD32T4G ONSEMI

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 Complementary Power Transistors
MJD32RLG ONSEMI

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 Complementary Power Transistors
MJD32CT4 STMICROELECTRONICS

功能相似

 Low voltage PNP power transistor

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