MJD32-I

更新时间： 2024-02-02 05:52:37

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管放大器
页数	文件大小	规格书
11页	129K
描述
Power Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJD32-I 技术参数

生命周期：	Active	包装说明：	IN-LINE, R-PSIP-T3
Reach Compliance Code：	compliant	风险等级：	5.62
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	40 V
配置：	SINGLE	最小直流电流增益 (hFE)：	10
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	PNP
功耗环境最大值：	1.56 W	最大功率耗散 (Abs)：	15 W
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	3 MHz
VCEsat-Max：	1.2 V	Base Number Matches：	1

MJD32-I 数据手册

MJD31, NJVMJD31T4G,

MJD31C, NJVMJD31CT4G

(NPN), MJD32,

NJVMJD32T4G, MJD32C,

NJVMJD32CG,

NJVMJD32CT4G (PNP)

http://onsemi.com

Complementary Power

Transistors

SILICON

POWER TRANSISTORS

3 AMPERES

DPAK For Surface Mount Applications

40 AND 100 VOLTS

15 WATTS

Designed for general purpose amplifier and low speed switching

applications.

COMPLEMENTARY

Features

COLLECTOR

2,4

COLLECTOR

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

• Epoxy Meets UL 94, V−0 @ 0.125 in

2,4

BASE

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

EMITTER

• These Devices are Pb−Free and are RoHS Compliant

DPAK

IPAK

CASE 369C

STYLE 1

CASE 369D

STYLE 1

MARKING DIAGRAMS

YWW

J3xxG

AYWW

J3xxG

DPAK

IPAK

= Site Code

= Year

= Work Week

= 1, 1C, 2, or 2C

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

Semiconductor Components Industries, LLC, 2013

Publication Order Number:

July, 2013 − Rev. 12

MJD31/D

12 3 4 5 6 7...11

中文翻译

下载PDF

与MJD32-I相关器件

型号	品牌	获取价格	描述	数据表
MJD32RL	ONSEMI	获取价格	Complementary Power Transistors
MJD32RLG	ONSEMI	获取价格	Complementary Power Transistors
MJD32T4	ONSEMI	获取价格	Complementary Power Transistors
MJD32T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD32T4G	ONSEMI	获取价格	Complementary Power Transistors
MJD32TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
MJD340	TYSEMI	获取价格	Load Formed for Surface Mount Application
MJD340	DIODES	获取价格	HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
MJD340	KEXIN	获取价格	NPN Epitaxial Silicon Transistor
MJD340	ONSEMI	获取价格	SILICON POWER TRANSISTORS