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MJD32CTM PDF预览

MJD32CTM

更新时间: 2024-01-08 21:33:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 49K
描述
Power Bipolar Transistor

MJD32CTM 数据手册

 浏览型号MJD32CTM的Datasheet PDF文件第2页浏览型号MJD32CTM的Datasheet PDF文件第3页浏览型号MJD32CTM的Datasheet PDF文件第4页浏览型号MJD32CTM的Datasheet PDF文件第5页 
MJD32/32C  
General Purpose Amplifier Low Speed  
Switching Applications  
D-PAK for Surface Mount Applications  
Load Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP32 and TIP32C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
- 40  
- 100  
V
V
CBO  
: MJD32  
: MJD32C  
Collector-Emitter Voltage  
- 40  
- 100  
V
V
CEO  
: MJD32  
: MJD32C  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 3  
V
A
EBO  
I
I
I
C
- 5  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
15  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.56  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: MJD32  
: MJD32C  
I
= - 30mA, I = 0  
-40  
-100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: MJD32  
V
V
= - 40V, I = 0  
= - 60V, I = 0  
B
-50  
-50  
µA  
µA  
CE  
CE  
B
: MJD32C  
Collector Cut-off Current  
: MJD32  
V
V
= - 40V, V = 0  
= - 100V, V = 0  
BE  
-20  
-20  
µA  
µA  
CE  
CE  
BE  
: MJD32C  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
-1  
mA  
BE  
C
h
V
V
= - 4V, I = - 1A  
25  
10  
FE  
CE  
CE  
C
= - 4V, I = - 3A  
50  
-1.2  
-1.8  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 3, I = - 375mA  
V
V
CE  
BE  
C
B
(on)  
V
V
= - 4A, I = - 3A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= -10V, I = - 500mA  
3
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

MJD32CTM 替代型号

型号 品牌 替代类型 描述 数据表
KSH32CTF FAIRCHILD

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