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MJD32CTF PDF预览

MJD32CTF

更新时间: 2024-02-26 17:35:26
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
5页 54K
描述
General Purpose Amplifier Low Speed Switching Applications

MJD32CTF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:2.98
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

MJD32CTF 数据手册

 浏览型号MJD32CTF的Datasheet PDF文件第2页浏览型号MJD32CTF的Datasheet PDF文件第3页浏览型号MJD32CTF的Datasheet PDF文件第4页浏览型号MJD32CTF的Datasheet PDF文件第5页 
MJD32/32C  
General Purpose Amplifier Low Speed  
Switching Applications  
D-PAK for Surface Mount Applications  
Load Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP32 and TIP32C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
- 40  
- 100  
V
V
CBO  
: MJD32  
: MJD32C  
Collector-Emitter Voltage  
- 40  
- 100  
V
V
CEO  
: MJD32  
: MJD32C  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 3  
V
A
EBO  
I
I
I
C
- 5  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
15  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.56  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: MJD32  
: MJD32C  
I
= - 30mA, I = 0  
-40  
-100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: MJD32  
V
V
= - 40V, I = 0  
= - 60V, I = 0  
B
-50  
-50  
µA  
µA  
CE  
CE  
B
: MJD32C  
Collector Cut-off Current  
: MJD32  
V
V
= - 40V, V = 0  
= - 100V, V = 0  
BE  
-20  
-20  
µA  
µA  
CE  
CE  
BE  
: MJD32C  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
-1  
mA  
BE  
C
h
V
V
= - 4V, I = - 1A  
25  
10  
FE  
CE  
CE  
C
= - 4V, I = - 3A  
50  
-1.2  
-1.8  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 3, I = - 375mA  
V
V
CE  
BE  
C
B
(on)  
V
V
= - 4A, I = - 3A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= -10V, I = - 500mA  
3
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

MJD32CTF 替代型号

型号 品牌 替代类型 描述 数据表
KSH32CTF FAIRCHILD

完全替代

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic
MJD32CTM FAIRCHILD

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Power Bipolar Transistor

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