Datasheet > MJD32CTF-NBDD002

MJD32CTF-NBDD002

更新时间： 2024-02-23 20:51:45

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	49K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MJD32CTF-NBDD002 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	10
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	3 MHz
Base Number Matches：	1

MJD32CTF-NBDD002 数据手册

MJD32/32C

General Purpose Amplifier Low Speed

Switching Applications

D-PAK for Surface Mount Applications

•

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP32 and TIP32C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

- 40

- 100

CBO

: MJD32

: MJD32C

Collector-Emitter Voltage

- 40

- 100

CEO

: MJD32

: MJD32C

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

- 5

- 3

EBO

- 5

- 1

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: MJD32

: MJD32C

= - 30mA, I = 0

-40

-100

Collector Cut-off Current

: MJD32

= - 40V, I = 0

= - 60V, I = 0

-50

µA

: MJD32C

Collector Cut-off Current

: MJD32

= - 40V, V = 0

= - 100V, V = 0

-20

µA

: MJD32C

Emitter Cut-off Current

* DC Current Gain

= - 5V, I = 0

-1

= - 4V, I = - 1A

= - 4V, I = - 3A

-1.2

-1.8

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

= - 3, I = - 375mA

(on)

= - 4A, I = - 3A

Current Gain Bandwidth Product

= -10V, I = - 500mA

MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4 5

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