是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | GREEN, PLASTIC PACKAGE-3 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 12 weeks | 风险等级: | 1.65 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD32CQ-13 | DIODES |
类似代替 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD32C1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD32CA | NEXPERIA |
获取价格 |
100 V, 3 A PNP high power bipolar transistorProduction | |
MJD32CG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD32CHE3 | MCC |
获取价格 |
||
MJD32CQ | DIODES |
获取价格 |
PNP, 100V, 3A, TO252 | |
MJD32CQ | YANGJIE |
获取价格 |
TO-252 | |
MJD32CQ-13 | DIODES |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
MJD32CRL | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD32CRLG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD32CT4 | STMICROELECTRONICS |
获取价格 |
Low voltage PNP power transistor |