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MJD32C-13 PDF预览

MJD32C-13

更新时间: 2024-11-20 10:55:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
6页 119K
描述
PNP SURFACE MOUNT TRANSISTOR

MJD32C-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-252
包装说明:GREEN, PLASTIC PACKAGE-3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:1.65
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

MJD32C-13 数据手册

 浏览型号MJD32C-13的Datasheet PDF文件第2页浏览型号MJD32C-13的Datasheet PDF文件第3页浏览型号MJD32C-13的Datasheet PDF文件第4页浏览型号MJD32C-13的Datasheet PDF文件第5页浏览型号MJD32C-13的Datasheet PDF文件第6页 
MJD32C  
PNP SURFACE MOUNT TRANSISTOR  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
High Collector-EmitterVoltage  
Ideally Suited for Automated Assembly Processes  
Ideal for Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Case: TO252-3L  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.34 grams (approximate)  
COLLECTOR  
3
4
2
BASE  
1
EMITTER  
Device Schematic  
Top View  
Pin Out Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-100  
-100  
-5  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Continuous Collector Current  
Peak Pulse Collector Current  
Continuous Base Current  
-3  
A
-5  
A
ICM  
-1  
A
IB  
Thermal Characteristics  
Characteristic  
Power Dissipation @TC = 25°C  
Symbol  
Value  
15  
Unit  
W
PD  
Thermal Resistance, Junction to Case  
Power Dissipation @TA = 25°C (Note 3)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
8.33  
°C/W  
W
Rθ  
JC  
1.5  
PD  
80  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
1 of 6  
www.diodes.com  
May 2010  
© Diodes Incorporated  
MJD32C  
Document number: DS31624 Rev. 3 - 2  

MJD32C-13 替代型号

型号 品牌 替代类型 描述 数据表
MJD32CQ-13 DIODES

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