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MJD31CH-Q PDF预览

MJD31CH-Q

更新时间: 2024-09-14 11:15:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 220K
描述
100 V, 3 A NPN high power bipolar transistorProduction

MJD31CH-Q 数据手册

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MJD31CH-Q  
100 V, 3 A NPN high power bipolar transistor  
18 May 2021  
Product data sheet  
1. General description  
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device  
(SMD) plastic package.  
2. Features and benefits  
High thermal power dissipation capability  
High energy efficiency due to less heat generation  
High current gain at VCE = 60 V  
Electrically similar to popular MJD31 series  
Low collector emitter saturation voltage  
Fast switching speeds  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Constant current drive backlighting application  
Motor drive  
Relay replacement  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
100  
V
IC  
collector current  
-
-
-
-
3
5
-
A
A
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
DC current gain VCE = 60 V; IC = 20 mA; pulsed; tp ≤  
-
120  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
VCE = 4 V; IC = 1 A; pulsed; tp = 300 µs;  
δ ≤ 0.02; Tamb = 25 °C  
25  
10  
-
-
-
-
VCE = 4 V; IC = 3 A; continuous; tp ≤  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
 
 
 
 

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