Datasheet > MJD31CTF

MJD31CTF

更新时间： 2024-11-02 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	293K
描述
3.0 A, 100 V NPN Bipolar Power Transistor

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技术参数
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替代型号

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MJD31CTF 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.65
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	100 V
配置：	SINGLE	最小直流电流增益 (hFE)：	10
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	15 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	3 MHz	Base Number Matches：	1

MJD31CTF 数据手册

Is Now Part of

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MJD31CTF 替代型号

型号	品牌	替代类型	描述	数据表
MJD31CT4	ONSEMI	完全替代	Complementary Power Transistors
NJVMJD31CT4G	ONSEMI	类似代替	Complementary Power Transistors
MJD31CG	ONSEMI	类似代替	Complementary Power Transistors

与MJD31CTF相关器件

型号	品牌	获取价格	描述	数据表
MJD31CTF_SBDD001A	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
MJD31C-TP	MCC	获取价格	Silicon NPN epitaxial planer Transistors
MJD31C-TP-HF	MCC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD31CUQ	DIODES	获取价格	NPN, 100V, 3A, TO252
MJD31T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD31T4	ONSEMI	获取价格	Complementary Power Transistors
MJD31T4G	ONSEMI	获取价格	Complementary Power Transistors
MJD31TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
MJD32	KEXIN	获取价格	Complementary Power Transistors
MJD32	ONSEMI	获取价格	Complementary Power Transistors

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