是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | Factory Lead Time: | 4 weeks |
风险等级: | 0.37 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD31CT4 | ONSEMI |
完全替代 |
Complementary Power Transistors | |
NJVMJD31CG | ONSEMI |
类似代替 |
Complementary Power Transistors | |
NJVMJD31CT4G | ONSEMI |
类似代替 |
Complementary Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD31CS | MCC |
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Tape&Reel:2.5Kpcs/Reel; | |
MJD31CT4 | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CT4 | STMICROELECTRONICS |
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Low voltage NPN power transistor | |
MJD31CT4-A | STMICROELECTRONICS |
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Low voltage NPN power transistor | |
MJD31CT4G | ONSEMI |
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Complementary Power Transistors | |
MJD31CTF | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
MJD31CTF | ONSEMI |
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3.0 A, 100 V NPN Bipolar Power Transistor | |
MJD31CTF_SBDD001A | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
MJD31C-TP | MCC |
获取价格 |
Silicon NPN epitaxial planer Transistors | |
MJD31C-TP-HF | MCC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |