是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | DPAK-3/2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 13 weeks | 风险等级: | 7.06 |
其他特性: | HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD31CRL | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CRLG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CS | MCC |
获取价格 |
Tape&Reel:2.5Kpcs/Reel; | |
MJD31CT4 | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CT4 | STMICROELECTRONICS |
获取价格 |
Low voltage NPN power transistor | |
MJD31CT4-A | STMICROELECTRONICS |
获取价格 |
Low voltage NPN power transistor | |
MJD31CT4G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CTF | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor | |
MJD31CTF | ONSEMI |
获取价格 |
3.0 A, 100 V NPN Bipolar Power Transistor | |
MJD31CTF_SBDD001A | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic |