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NJVMJD31CT4G PDF预览

NJVMJD31CT4G

更新时间: 2024-11-01 12:05:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
11页 129K
描述
Complementary Power Transistors

NJVMJD31CT4G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:,针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:5 weeks风险等级:0.41
Is Samacsys:N最大集电极电流 (IC):3 A
配置:Single最小直流电流增益 (hFE):10
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):15 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
标称过渡频率 (fT):3 MHzBase Number Matches:1

NJVMJD31CT4G 数据手册

 浏览型号NJVMJD31CT4G的Datasheet PDF文件第2页浏览型号NJVMJD31CT4G的Datasheet PDF文件第3页浏览型号NJVMJD31CT4G的Datasheet PDF文件第4页浏览型号NJVMJD31CT4G的Datasheet PDF文件第5页浏览型号NJVMJD31CT4G的Datasheet PDF文件第6页浏览型号NJVMJD31CT4G的Datasheet PDF文件第7页 
MJD31, NJVMJD31T4G,  
MJD31C, NJVMJD31CT4G  
(NPN), MJD32,  
NJVMJD32T4G, MJD32C,  
NJVMJD32CG,  
NJVMJD32CT4G (PNP)  
http://onsemi.com  
Complementary Power  
Transistors  
SILICON  
POWER TRANSISTORS  
3 AMPERES  
DPAK For Surface Mount Applications  
40 AND 100 VOLTS  
15 WATTS  
Designed for general purpose amplifier and low speed switching  
applications.  
COMPLEMENTARY  
Features  
COLLECTOR  
2,4  
COLLECTOR  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular TIP31 and TIP32 Series  
Epoxy Meets UL 94, V0 @ 0.125 in  
2,4  
1
1
BASE  
BASE  
3
3
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
EMITTER  
EMITTER  
4
These Devices are PbFree and are RoHS Compliant  
4
1
2
1
2
3
3
DPAK  
IPAK  
CASE 369C  
STYLE 1  
CASE 369D  
STYLE 1  
MARKING DIAGRAMS  
YWW  
J3xxG  
AYWW  
J3xxG  
DPAK  
IPAK  
A
Y
= Site Code  
= Year  
WW  
xx  
G
= Work Week  
= 1, 1C, 2, or 2C  
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
July, 2013 Rev. 12  
MJD31/D  

NJVMJD31CT4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD31CT4G-VF01 ONSEMI

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3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL
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