是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, CASE 369D-01, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.3 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 140 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD31C1G | ONSEMI |
完全替代 |
Complementary Power Transistors | |
MJD31C1 | MOTOROLA |
功能相似 |
Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD31C-1 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
MJD31C-1 | ONSEMI |
获取价格 |
3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3 | |
MJD31C1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CA | NEXPERIA |
获取价格 |
100 V, 3 A NPN high power bipolar transistorProduction | |
MJD31CEITU | ONSEMI |
获取价格 |
3.0 A, 100 V NPN Bipolar Power Transistor | |
MJD31CG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD31CHE3 | MCC |
获取价格 |
||
MJD31CHQ | DIODES |
获取价格 |
NPN, 100V, 3A, TO252 | |
MJD31CH-Q | NEXPERIA |
获取价格 |
100 V, 3 A NPN high power bipolar transistorProduction | |
MJD31CITU | ONSEMI |
获取价格 |
3.0 A, 100 V NPN Bipolar Power Transistor |