Datasheet > MJD31CA

MJD31CA

更新时间： 2023-09-03 20:31:13

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	226K
描述
100 V, 3 A NPN high power bipolar transistorProduction

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MJD31CA 数据手册

MJD31CA

100 V, 3 A NPN high power bipolar transistor

23 November 2020

Product data sheet

1. General description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

PNP complement: MJD32CA

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD31 series

Low collector emitter saturation voltage

Fast switching speeds

AEC-Q101 qualified

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 4 V; I_C= 1 A; T_amb= 25 °C

V_CE= 4 V; I_C= 3 A; T_amb= 25 °C

12 3 4 5 6 7...11

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