MJD31C

更新时间： 2024-02-08 14:03:00

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
4页	598K
描述
Silicon NPN epitaxial planer Transistors

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MJD31C 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MJD31C

Micro Commercial Components

Features

Silicon

NPN epitaxial planer

Transistors

Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS

Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Electrically Similar to Popular TIP31 and TIP32 Series

Designed for general purpose amplifier and low speed switching

applications.

Maximum Thermal Resistance: 100^oC/W Junction to Ambient

DPAK

Maximum Ratings @ 25 C Unless Otherwise Specified

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

100

Unit

Collector Current-Continuous

P_C

Collector Dissipation

1.25

150

-65 to +150

T_J

Operating Junction Temperature

T_STG

Storage Temperature

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

V_(BR)CEO

Parameter

Collector-Emitter Breakdown Voltage

(I_C=30mAdc, I_B=0)

Min

100

Typ

Max

Units

---

Vdc

V_(BR)CBO

V_(BR)EBO

I_CEO

Collector-Base Breakdown Voltage

(I_C=1mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=1mAdc, I_C=0)

Collector Cutoff Current

(V_CE=60Vdc, I_B=0)

Collector Cutoff Current

(V_CE=100Vdc, V_EB=0)

100

---

Vdc

---

uAdc

mAdc

I_CES

I_EBO

Emitter Cutoff Current

(V_EB=5Vdc, I_C=0)

PIN 1. BASE

PIN 2. 4. COLLECTOR

PIN 3. EMITTER

h_FE

DC Current Gain

(I_C=1Adc, V_CE=4Vdc)

---

(I_C=3Adc, V_CE=4Vdc)

DIMENSIONS

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=3Adc, I_B=0.375Adc) (note 1)

INCHES

MAX

---

1.2

Vdc

DIM

MIN

MAX

2.40

0.13

0.86

0.58

6.70

5.46

NOTE

0.087

0.000

0.026

0.018

0.256

0.201

0.094

0.005

0.034

0.023

0.264

0.215

2.20

0.00

0.66

0.46

6.50

5.10

V_BE(on)

Base-Emitter Voltage

(IC=3Adc, VCE=4Vdc ) (note 1)

---

1.8

---

Vdc

Transition frequency

(V_CE=10Vdc,IC=0.5Adc,fT=1KHz )

f_T

MHZ

0.190

4.83

0.236

0.086

0.386

0.244

0.094

0.409

6.00

2.18

9.80

6.20

2.39

10.40

Note:

1. Pulse Test: PW≤300µs, Duty Cycle≤2%

0.114

0.063

0.043

0.000

2.90

1.60

0.055

0.067

1.40

1.70

0.051

0.012

1.10

0.00

1.30

0.30

0.211

5.35

www.mccsemi.com

1 of 4

Revision: A

2011/05/05

12 3 4

中文翻译

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与MJD31C相关器件

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MJD31C(TO-251)	BL Galaxy Electrical	获取价格	100V,3A,Medium Power NPN Bipolar Transistor
MJD31C(TO-252)	BL Galaxy Electrical	获取价格	100V,3A,Medium Power NPN Bipolar Transistor
MJD31C1	ONSEMI	获取价格	Complementary Power Transistors
MJD31C1	MOTOROLA	获取价格	Transistor
MJD31C-1	MOTOROLA	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD31C-1	ONSEMI	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3
MJD31C1G	ONSEMI	获取价格	Complementary Power Transistors
MJD31CA	NEXPERIA	获取价格	100 V, 3 A NPN high power bipolar transistorProduction
MJD31CEITU	ONSEMI	获取价格	3.0 A, 100 V NPN Bipolar Power Transistor
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