Datasheet > MJD31C

MJD31C

更新时间： 2024-02-25 19:50:19

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
5页	126K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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MJD31C 数据手册

MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features

Mechanical Data

•

Epitaxial Planar Die Construction

High Collector-EmitterVoltage

Ideally Suited for Automated Assembly Processes

Ideal for Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Case: DPAK

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish — Matte Tin annealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

•

Ordering Information: See Page 4

Weight: 0.34 grams (approximate)

COLLECTOR

2,4

BASE

EMITTER

Device Schematic

Top View

Pin Out Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Continuous Base Current

I_CM

I_B

Thermal Characteristics

Characteristic

Power Dissipation @T_C= 25°C

Symbol

Value

Unit

P_D

Thermal Resistance, Junction to Case

Power Dissipation @T_A= 25°C (Note 3)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

8.33

°C/W

R_θ

1.5

P_D

°C/W

°C

R_θ

-55 to +150

T_J, T_STG

1 of 5

www.diodes.com

April 2010

MJD31C

Document number: DS31625 Rev. 3 - 2

12 3 4 5

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