Datasheet > MJD31C

MJD31C

更新时间： 2023-12-06 20:01:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	826K
描述
TO-251

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中文翻译

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数据手册

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MJD31C 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

TO-251-3L

MJD31C

TRANSISTOR (NPN)

FEATURES

1.BASE

Designed for General Purpose Amplifier and Low Speed Switching Applications.

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

2.COLLECTOR

3.EMITTER

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP31 and TIP32 Series

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

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XXXX=Code

MJD31C

XXXX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Max

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

P_C

1.25

-55-150

℃

T_J,T_stg

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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