Datasheet > MJD31C

MJD31C

更新时间： 2024-11-10 11:15:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	225K
描述
100 V, 3 A NPN high power bipolar transistorProduction

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MJD31C 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.63	Is Samacsys：	N
Base Number Matches：	1

MJD31C 数据手册

MJD31C

100 V, 3 A NPN high power bipolar transistor

16 September 2020

Product data sheet

1. General description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

PNP complement: MJD32C

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD31 series

Low collector emitter saturation voltage

Fast switching speeds

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= 4 V; I_C= 1 A; T_amb= 25 °C

V_CE= 4 V; I_C= 3 A; T_amb= 25 °C

12 3 4 5 6 7...11

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