MJD3055TF

更新时间： 2024-01-07 16:15:53

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管放大器
页数	文件大小	规格书
6页	150K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MJD3055TF 数据手册

Order this document

by MJD2955/D

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

SILICON

POWER TRANSISTORS

10 AMPERES

60 VOLTS

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to MJE2955 and MJE3055

20 WATTS

DC Current Gain Specified to 10 Amperes

High Current Gain–Bandwidth Product — f = 2.0 MHz (Min) @ I = 500 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CASE 369A–13

Base Current

Total Power Dissipation @ T = 25 C

Derate above 25 C

P †

0.16

Watts

W/ C

CASE 369–07

Total Power Dissipation (1) @ T = 25 C

Derate above 25 C

1.75

0.014

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient (1)

θJC

θJA

(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

inches

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁷r Power Transistor Device Data

12 3 4 5 6

中文翻译

下载PDF

MJD3055TF 替代型号

型号	品牌	替代类型	描述	数据表
KSH3055TM	ONSEMI	完全替代	NPN外延硅晶体管
MJD3055T4	ONSEMI	类似代替	Complementary Power Transistors DPAK For Surface Mount Applications
MJD3055G	ONSEMI	类似代替	Complementary Power Transistors DPAK For Surface Mount Applications

与MJD3055TF相关器件

型号	品牌	获取价格	描述	数据表
MJD30C	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJD30C	MOTOROLA	获取价格	Transistor
MJD30C-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJD31	KEXIN	获取价格	Complementary Power Transistors
MJD31	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD31	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
MJD31	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD31	ONSEMI	获取价格	Complementary Power Transistors
MJD31_05	ONSEMI	获取价格	Complementary Power Transistors
MJD31_11	ONSEMI	获取价格	Complementary Power Transistors