Datasheet > MJD3055 TO-251

MJD3055 TO-251

更新时间： 2024-11-19 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	318K
描述
60V,10A,General Purpose NPN Bipolar Transistor

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MJD3055 TO-251 数据手册

NPN Silicon Epitaxial Planar Transistor

MJD3055

Features



Lead formed for surface mount application

DC current gain specified to 10A

Mechanic al Data



Case: TO-252

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

D3055

MJD3055

80pcs / Tube or 2500pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Base Current (continuous)

I_B

Thermal Characteristics

Parameter

Total Power Dissipation

Symbol

P_D

Value

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

°C/W

°C

8.4

4.6

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 35mm * 35mm * 1mm aluminum heatsink

STM0334A: November 2020

www.gmesemi.com

12 3 4

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