生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.82 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 15 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | VCEsat-Max: | 0.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD29TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD-2V16W1P3 | SEOUL |
获取价格 |
120V 17W Downlight | |
MJD30 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 | |
MJD30-1 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
MJD3055 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD3055 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica | |
MJD3055 | STMICROELECTRONICS |
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COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJD3055 | ONSEMI |
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Complementary Power Transistors | |
MJD3055 | CJ |
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TO-251 | |
MJD3055 TO-251 | BL Galaxy Electrical |
获取价格 |
60V,10A,General Purpose NPN Bipolar Transistor |