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MJD29CTF PDF预览

MJD29CTF

更新时间: 2024-11-18 13:11:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 47K
描述
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

MJD29CTF 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

MJD29CTF 数据手册

 浏览型号MJD29CTF的Datasheet PDF文件第2页浏览型号MJD29CTF的Datasheet PDF文件第3页浏览型号MJD29CTF的Datasheet PDF文件第4页 
MJD29/29C  
General Purpose Amplifier  
Low Speed Switching Applications  
Load Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP29 and TIP29C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
CBO  
: MJD29  
: MJD29C  
40  
100  
V
V
Collector-Emitter Voltage  
CEO  
: MJD29  
: MJD29C  
40  
100  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
5
V
A
EBO  
I
I
I
1
3
C
A
CP  
B
0.4  
A
P
Collector Dissipation (T =25°C)  
15  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.56  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
*Collector-Emitter Sustaining Voltage  
CEO  
CEO  
CES  
EBO  
: MJD29  
: MJD29C  
I
= 30mA, I = 0  
40  
100  
V
V
C
B
I
I
I
Collector Cut-off Current  
: MJD29  
V
V
= 40V, I = 0  
= 60V, I = 0  
B
50  
50  
µA  
µA  
CE  
CE  
B
: MJD29C  
Collector Cut-off Current  
: MJD29  
V
V
= 40V, V = 0  
= 100V, V = 0  
BE  
20  
20  
µA  
µA  
CE  
CE  
BE  
: MJD29C  
Emitter Cut-off Current  
*DC Current Gain  
V
= 5V, I = 0  
1
mA  
BE  
C
h
V
V
= 4V, I = 0.2A  
40  
15  
FE  
CE  
CE  
C
= 4V, I = 1A  
75  
0.7  
1.3  
C
V
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter ON Voltage  
I
= 1A, I = 125mA  
V
V
CE  
BE  
C
B
(on)  
V
V
= 4A, I = 1A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= 10V, I = 200mA  
3
MHz  
T
C
* Pulse Test: PW 300µs, Duty Cycle 2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

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