是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.81 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD29I | FAIRCHILD |
获取价格 |
1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
MJD29-I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
MJD29-T1 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
MJD29TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD-2V16W1P3 | SEOUL |
获取价格 |
120V 17W Downlight | |
MJD30 | FAIRCHILD |
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Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 | |
MJD30-1 | SAMSUNG |
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Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
MJD3055 | MOTOROLA |
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SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
MJD3055 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica | |
MJD3055 | STMICROELECTRONICS |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |