MJD2955G

更新时间： 2024-11-18 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	78K
描述
Complementary Power Transistors DPAK For Surface Mount Applications

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MJD2955G 数据手册

MJD2955 (PNP)

MJD3055 (NPN)

Complementary Power

Transistors

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose amplifier and low speed switching

applications.

SILICON

POWER TRANSISTORS

10 AMPERES

60 VOLTS, 20 WATTS

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Electrically Similar to MJE2955 and MJE3055

• DC Current Gain Specified to 10 Amperes

MARKING

DIAGRAMS

• High Current Gain−Bandwidth Product − f = 2.0 MHz (Min) @ I

= 500 mAdc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

YWW

xx55G

DPAK

CASE 369C

STYLE 1

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

YWW

xx55G

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Vdc

Adc

CEO

DPAK−3

CASE 369D

STYLE 1

Base Current

Total Power Dissipation @ T = 25°C

P {

0.16

W/°C

Derate above 25°C

= Year

Total Power Dissipation (Note1)

WW = Work Week

Jxx55 = Device Code

x = 29 or 30

1.75

0.014

@ T = 25°C

W/°C

°C

Derate above 25°C

= Pb−Free Package

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

Unit

°C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note1)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must

be observed.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 8

MJD2955/D

12 3 4 5 6

中文翻译

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MJD2955G 替代型号

型号	品牌	替代类型	描述	数据表
KSH2955TF	ONSEMI	完全替代	PNP外延硅晶体管
KSH2955TF	FAIRCHILD	完全替代	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic
MJD2955	ONSEMI	完全替代	Complementary Power Transistors

与MJD2955G相关器件

型号	品牌	获取价格	描述	数据表
MJD2955RLG	ONSEMI	获取价格	10 A, 60 V PNP Bipolar Power Transistor
MJD2955T4	ONSEMI	获取价格	Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD2955T4G	ONSEMI	获取价格	Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955TF	ONSEMI	获取价格	10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL
MJD29C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
MJD29C	MOTOROLA	获取价格	Transistor
MJD29CI	FAIRCHILD	获取价格	暂无描述
MJD29CITU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
MJD29C-T1	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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