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MJD2955RLG PDF预览

MJD2955RLG

更新时间: 2024-11-22 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 184K
描述
10 A, 60 V PNP Bipolar Power Transistor

MJD2955RLG 数据手册

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MJD2955,  
NJVMJD2955T4Gꢀ(PNP)  
MJD3055,  
NJVMJD3055T4Gꢀ(NPN)  
Complementary Power  
Transistors  
http://onsemi.com  
DPAK For Surface Mount Applications  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
Designed for general purpose amplifier and low speed switching  
applications.  
60 VOLTS, 20 WATTS  
Features  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Electrically Similar to MJE2955 and MJE3055  
DC Current Gain Specified to 10 Amperes  
DPAK  
CASE 369C  
STYLE 1  
IPAK  
CASE 369D  
STYLE 1  
High Current GainBandwidth Product f = 2.0 MHz (Min) @ I  
T
C
= 500 mAdc  
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings:  
MARKING DIAGRAMS  
Human Body Model, 3B > 8000 V  
Machine Model, C > 400 V  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
AYWW  
J
xx55G  
AYWW  
J
xx55G  
These are PbFree Packages*  
DPAK  
IPAK  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Jxx55 = Device Code  
x = 29 or 30  
G
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 Rev. 12  
MJD2955/D  

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