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MJD2955TF PDF预览

MJD2955TF

更新时间: 2024-02-16 07:17:21
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 150K
描述
10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL

MJD2955TF 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.21
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

MJD2955TF 数据手册

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Order this document  
by MJD2955/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching applications.  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
60 VOLTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to MJE2955 and MJE3055  
20 WATTS  
DC Current Gain Specified to 10 Amperes  
High Current Gain–Bandwidth Product — f = 2.0 MHz (Min) @ I = 500 mAdc  
T
C
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
70  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
CASE 369A–13  
V
CB  
EB  
V
I
C
10  
6
Base Current  
I
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
20  
0.16  
Watts  
W/ C  
CASE 369–07  
Total Power Dissipation (1) @ T = 25 C  
A
Derate above 25 C  
P
D
1.75  
0.014  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient (1)  
R
R
θJC  
θJA  
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
inches  
mm  
REV 2  
Motorola, Inc. 1997

MJD2955TF 替代型号

型号 品牌 替代类型 描述 数据表
MJD2955T4G ONSEMI

类似代替

Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955G ONSEMI

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Complementary Power Transistors DPAK For Surface Mount Applications
MJD31T4G ONSEMI

类似代替

Complementary Power Transistors

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