是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.88 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD29CI | FAIRCHILD |
获取价格 |
暂无描述 | |
MJD29CITU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic | |
MJD29C-T1 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
MJD29CTF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
MJD29I | FAIRCHILD |
获取价格 |
1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
MJD29-I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
MJD29-T1 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
MJD29TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD-2V16W1P3 | SEOUL |
获取价格 |
120V 17W Downlight | |
MJD30 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 |