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MJD2955T4G

更新时间： 2024-01-22 17:11:05
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器
页数 文件大小 规格书
6页 78K
描述
Complementary Power Transistors DPAK For Surface Mount Applications

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中文翻译

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MJD2955T4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：6 weeks风险等级：0.54
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：20 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：2 MHzBase Number Matches：1

MJD2955T4G 数据手册

 浏览型号MJD2955T4G的Datasheet PDF文件第2页浏览型号MJD2955T4G的Datasheet PDF文件第3页浏览型号MJD2955T4G的Datasheet PDF文件第4页浏览型号MJD2955T4G的Datasheet PDF文件第5页浏览型号MJD2955T4G的Datasheet PDF文件第6页 
MJD2955 (PNP)  
MJD3055 (NPN)  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
60 VOLTS, 20 WATTS  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Electrically Similar to MJE2955 and MJE3055  
• DC Current Gain Specified to 10 Amperes  
MARKING  
DIAGRAMS  
• High Current Gain−Bandwidth Product − f = 2.0 MHz (Min) @ I  
T
C
4
= 500 mAdc  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
YWW  
J
xx55G  
2
1
3
DPAK  
CASE 369C  
STYLE 1  
• Pb−Free Packages are Available  
MAXIMUM RATINGS  
4
Rating  
Symbol  
Max  
Unit  
YWW  
J
xx55G  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
V
60  
70  
5
Vdc  
Vdc  
Vdc  
Adc  
Adc  
CEO  
V
CB  
EB  
1
V
2
DPAK−3  
CASE 369D  
STYLE 1  
3
I
C
I
B
10  
6
Base Current  
Total Power Dissipation @ T = 25°C  
P {  
D
20  
0.16  
W
W/°C  
C
Derate above 25°C  
Y
= Year  
Total Power Dissipation (Note1)  
P
W
WW = Work Week  
Jxx55 = Device Code  
x = 29 or 30  
D
1.75  
0.014  
@ T = 25°C  
A
W/°C  
°C  
Derate above 25°C  
G
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note1)  
R
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must  
be observed.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 8  
MJD2955/D  
 
123456

中文翻译

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MJD2955T4G 替代型号

型号 品牌 替代类型 描述 数据表
KSH2955TF ONSEMI

完全替代

 PNP外延硅晶体管
MJD2955T4 ONSEMI

完全替代

 Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955G ONSEMI

类似代替

 Complementary Power Transistors DPAK For Surface Mount Applications

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