Datasheet > KSH2955TF

KSH2955TF

更新时间： 2023-09-03 20:30:51

品牌	Logo	应用领域
安森美 - ONSEMI		放大器晶体管
页数	文件大小	规格书
7页	167K
描述
PNP外延硅晶体管

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

KSH2955TF 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.26	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	最大功率耗散 (Abs)：	20 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	2 MHz
Base Number Matches：	1

KSH2955TF 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

12 3 4 5 6 7

中文翻译

下载PDF

KSH2955TF 替代型号

型号	品牌	替代类型	描述	数据表
NJVMJD2955T4G	ONSEMI	完全替代	Complementary Power Transistors
MJD2955T4G	ONSEMI	完全替代	Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955G	ONSEMI	完全替代	Complementary Power Transistors DPAK For Surface Mount Applications

与KSH2955TF相关器件

型号	品牌	获取价格	描述	数据表
KSH2955-TF	SAMSUNG	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH2955TM	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic
KSH2955TM	ONSEMI	获取价格	PNP外延硅晶体管
KSH29C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
KSH29C	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSH29CI	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
KSH29C-I	FAIRCHILD	获取价格	1 A, 100 V, NPN, Si, POWER TRANSISTOR, IPAK-3
KSH29C-I	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSH29CTF	ONSEMI	获取价格	NPN外延硅晶体管
KSH29C-TF	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

与KSH2955TF相关文章

REF03GPZ资料解读：主要特征、技术参数、应用场景
2024-08-05

24
一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

72
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

61
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

64

产品中心

服务支持

精选活动

关于我们

帮助中心

KSH2955TF

KSH2955TF 技术参数

KSH2955TF 数据手册

KSH2955TF 替代型号

与KSH2955TF相关器件

与KSH2955TF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

KSH2955TF

KSH2955TF 技术参数

KSH2955TF 数据手册

KSH2955TF 替代型号

与KSH2955TF相关器件

与KSH2955TF相关文章

您还可以找

您在本页遇到什么问题？