Datasheet > MJD2955T4

MJD2955T4

更新时间： 2024-11-17 22:17:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管放大器
页数	文件大小	规格书
6页	205K
描述
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

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MJD2955T4 数据手册

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by MJD2955/D

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

SILICON

POWER TRANSISTORS

10 AMPERES

60 VOLTS

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to MJE2955 and MJE3055

20 WATTS

DC Current Gain Specified to 10 Amperes

High Current Gain–Bandwidth Product — f = 2.0 MHz (Min) @ I = 500 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CASE 369A–13

Base Current

Total Power Dissipation @ T = 25 C

Derate above 25 C

P †

0.16

Watts

W/ C

CASE 369–07

Total Power Dissipation (1) @ T = 25 C

Derate above 25 C

1.75

0.014

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient (1)

θJC

θJA

(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

inches

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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与MJD2955T4相关器件

型号	品牌	获取价格	描述	数据表
MJD2955T4G	ONSEMI	获取价格	Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955TF	ONSEMI	获取价格	10 A, 60 V PNP Bipolar Power Transistor, 2000-REEL
MJD29C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
MJD29C	MOTOROLA	获取价格	Transistor
MJD29CI	FAIRCHILD	获取价格	暂无描述
MJD29CITU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
MJD29C-T1	SAMSUNG	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD29CTF	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
MJD29I	FAIRCHILD	获取价格	1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3
MJD29-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3