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MJD2955-1 PDF预览

MJD2955-1

更新时间: 2024-11-20 22:25:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 205K
描述
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS

MJD2955-1 数据手册

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Order this document  
by MJD2955/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching applications.  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
60 VOLTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to MJE2955 and MJE3055  
20 WATTS  
DC Current Gain Specified to 10 Amperes  
High Current Gain–Bandwidth Product — f = 2.0 MHz (Min) @ I = 500 mAdc  
T
C
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
70  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
CASE 369A–13  
V
CB  
V
EB  
I
C
10  
6
Base Current  
I
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
20  
0.16  
Watts  
W/ C  
CASE 369–07  
Total Power Dissipation (1) @ T = 25 C  
A
Derate above 25 C  
P
D
1.75  
0.014  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
C
J
stg  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient (1)  
R
R
θJC  
θJA  
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
inches  
mm  
REV 1  
Motorola, Inc. 1995

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