Datasheet > MJD2955(TO-251)

MJD2955(TO-251)

更新时间： 2024-09-16 17:00:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	223K
描述
60V,10A,Medium Power PNP Bipolar Transistor

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MJD2955(TO-251) 数据手册

Product Specification

Epitaxial Planar NPN Transistor

MJD112

FEATURES



High DC current gain

Built-in a damper diode at E-C

Lead formed for surface mount applications

Straight lead

TO-251

TO-252

Ordering Information

Part Number

Package

TO-251

TO-252

Shipping

Marking Code

80 pcs / Tube

MJD112

80 pcs / Tube or 2500 pcs / Tape & Reel

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

100

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

100

Collector Current

Collector Power Dissipation

Base Current

I_CP

I_B

℃

Collector Power Dissipation

Junction and Storage temperature range

P_C

1.5

T_J,T_STG

-55 to +150

STM5024A

www.gmesemi.com

12 3 4 5

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