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MJD2955_11

更新时间： 2024-11-05 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 117K
描述
Complementary Power Transistors

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中文翻译

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MJD2955_11 数据手册

 浏览型号MJD2955_11的Datasheet PDF文件第2页浏览型号MJD2955_11的Datasheet PDF文件第3页浏览型号MJD2955_11的Datasheet PDF文件第4页浏览型号MJD2955_11的Datasheet PDF文件第5页浏览型号MJD2955_11的Datasheet PDF文件第6页 
MJD2955 (PNP)  
MJD3055 (NPN)  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
10 AMPERES  
60 VOLTS, 20 WATTS  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Electrically Similar to MJE2955 and MJE3055  
• DC Current Gain Specified to 10 Amperes  
MARKING  
DIAGRAMS  
• High Current Gain−Bandwidth Product − f = 2.0 MHz (Min) @ I  
T
C
4
= 500 mAdc  
AYWW  
J
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
xx55G  
2
1
3
DPAK  
Machine Model, C u 400 V  
CASE 369C  
STYLE 1  
• These are Pb−Free Packages  
MAXIMUM RATINGS  
4
Rating  
Symbol  
Max  
Unit  
AYWW  
J
xx55G  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
V
60  
70  
5
Vdc  
Vdc  
Vdc  
Adc  
Adc  
CEO  
V
CB  
1
V
2
EB  
DPAK−3  
CASE 369D  
STYLE 1  
3
I
C
10  
6
Base Current  
I
B
Total Power Dissipation @ T = 25°C  
P {  
20  
W
C
D
A
Y
= Assembly Location  
= Year  
Derate above 25°C  
0.16  
W/°C  
Total Power Dissipation (Note1)  
P
D
W
WW = Work Week  
Jxx55 = Device Code  
x = 29 or 30  
1.75  
0.014  
@ T = 25°C  
A
W/°C  
°C  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
G
= Pb−Free Package  
J
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
6.25  
71.4  
°C/W  
°C/W  
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note1)  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must  
be observed.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 10  
MJD2955/D  
 
123456

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