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MJD2955(TO-251) PDF预览

MJD2955(TO-251)

更新时间: 2024-11-07 17:00:35
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 223K
描述
60V,10A,Medium Power PNP Bipolar Transistor

MJD2955(TO-251) 数据手册

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Product Specification  
Epitaxial Planar NPN Transistor  
MJD112  
FEATURES  
High DC current gain  
Built-in a damper diode at E-C  
Lead formed for surface mount applications  
Straight lead  
TO-251  
TO-252  
Ordering Information  
Part Number  
Package  
TO-251  
TO-252  
Shipping  
Marking Code  
80 pcs / Tube  
MJD112  
MJD112  
80 pcs / Tube or 2500 pcs / Tape & Reel  
MAXIMUM RATING operating temperature range applies unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Volage  
VCBO  
100  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
100  
V
V
5
Collector Current  
2
A
Collector Power Dissipation  
Base Current  
ICP  
4
50  
A
IB  
mA  
W
Collector Power Dissipation  
Junction and Storage temperature range  
PC  
1.5  
TJ, TSTG  
-55 to +150  
STM5024A  
www.gmesemi.com  
1

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