5秒后页面跳转
IXTT110N10L2 PDF预览

IXTT110N10L2

更新时间: 2024-11-05 13:17:27
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 138K
描述
Power Field-Effect Transistor,

IXTT110N10L2 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N其他特性:AVALANCE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):110 A最大漏极电流 (ID):110 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):600 W
最大脉冲漏极电流 (IDM):300 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

IXTT110N10L2 数据手册

 浏览型号IXTT110N10L2的Datasheet PDF文件第2页浏览型号IXTT110N10L2的Datasheet PDF文件第3页浏览型号IXTT110N10L2的Datasheet PDF文件第4页浏览型号IXTT110N10L2的Datasheet PDF文件第5页浏览型号IXTT110N10L2的Datasheet PDF文件第6页 
Advance Technical Information  
LinearL2TM Power  
MOSFET w/ Extended  
FBSOA  
VDSS = 100V  
ID25 = 110A  
RDS(on) 18mΩ  
IXTH110N10L2  
IXTT110N10L2  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
D
D (Tab)  
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXTT)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
110  
300  
A
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
110  
3
A
J
S
D (Tab)  
PD  
TC = 25°C  
600  
W
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 to +150  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Designed for Linear Operation  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-247  
TO-268  
6.0  
4.0  
g
g
z Integrated Gate Resistor for Easy  
Paralleling  
z Guaranteed FBSOA at 75°C  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
4.5  
z
±100 nA  
μA  
Applications  
IDSS  
5
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
50 μA  
18 mΩ  
z Solid State Circuit Breakers  
z Soft Start Controls  
RDS(on)  
z Linear Amplifiers  
z Programmable Loads  
z Current Regulators  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100235(01/10)  

与IXTT110N10L2相关器件

型号 品牌 获取价格 描述 数据表
IXTT110N10P IXYS

获取价格

N-Channel Enhancement Mode
IXTT110N10P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTT11P50 IXYS

获取价格

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
IXTT11P50 LITTELFUSE

获取价格

P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2
IXTT120N15P LITTELFUSE

获取价格

Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, M
IXTT12N140 IXYS

获取价格

Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IXTT12N150 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT12N150HV LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT12N150HV IXYS

获取价格

Power Field-Effect Transistor,
IXTT12N150HV-TRL IXYS

获取价格

Power Field-Effect Transistor,